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UV Tech Material Ltd.

Showing 1 - 10 of 12, total 2 pages        [First] [Previous] [Next] [Last]

1
planar retancular silicon si target
planar retancular silicon si target
Specification: L1900*W350*T30mm£¬Multi-assembly bonding into Cu plate tube Custo
Detail: Application: Widely used in various types of Optical glass, Architectural and Automotive glass film, Touch panel glass film Physical and Chemical Properties Chemical Composition: Si Molding process: Straight pull/Casting P...

2
planar retancular chromium cr target
planar retancular chromium cr target
Specification: L1900*W350*T30mm£¬Multi-assembly bonding into Cu plate tube Custo
Detail: Application: Widely used in various types of Decorative films, Architectural and Automotive glass film, Lithographic plate chrome film Physical and Chemical Properties Chemical Composition: Cr Density: 99.5%-99.99% Purity...

3
rotatable cylindrical ito sputtering target
rotatable cylindrical ito sputtering target
Specification: Maximum Machining Size L 4000MM T 6-13MM
Detail: Application: Widely used in TN, STN LCD and touch screen, semiconductor electronics, thin film solar energy, Low-E glass film Physical and Chemical Properties: Chemical Composition: ITO Molding process: CIP+Sintering+Bondin...

4
rotatable cylindrical aluminium al sputtering target
rotatable cylindrical aluminium al sputtering target
Specification: Maximum Machining Size L 4000MM T 6-13MM
Detail: Application: Widely used in decorative & functional coating, semiconductor electronics , TFT-LCD, flat panel display Physical and Chemical Properties Chemical Composition: Al Molding process: Spray Purity: ¡Ý2.6g/cm3 (...

5
rotatable cylindrical tial sputtering target
rotatable cylindrical tial sputtering target
Specification: Maximum Machining Size L 4000MM T 6-13MM
Detail: Application: Mainly used for producing ceramic TiAl alloy film, widely used in decorative and tool coating, Semiconductor Physical and Chemical Properties Chemical Composition: TiAl Proportion: 50:50at% Molding process: ...

6
rotatable cylindrical copper cu sputtering target
rotatable cylindrical copper cu sputtering target
Specification: Maximum Machining Size L 4000MM T 6-13MM
Detail: Application: Mainly used for producing pure Cu film, widely used in Decorative glass mirror film, PCB plate, TFT-LCD, Low-E glass film, semiconductor electronics Physical and Chemical Properties Chemical Composition: Cu Mol...

7
rotatable cylindrical niobium nb sputtering target
rotatable cylindrical niobium nb sputtering target
Specification: Maximum Machining Size L 4000MM T 6-13MM
Detail: Application: Widely used in optical glass, AR film of touch panel, Low-E glass film Physical and Chemical Properties Chemical Composition: Nb Resistivity ( 20¡ãC) : ¡Ü 9.9X10-5 ¦¸. cm Molding process: Spray Purity: ¡Ý8...

8
rotatable cylindrical sial sputtering target
rotatable cylindrical sial sputtering target
Specification: Maximum Machining Size L 4000MM T 6-13MM
Detail: Application: Mainly used for producing SiO2/Si3N4 film, Widely used for Optical glass AR film, Low-E glass film, Semiconductor, TFT-LCD, Flat display, Touch panel glass Physical and Chemical Properties Proportion: SiAl(90:1...

9
rotatable cylindrical tio2 sputtering target
rotatable cylindrical tio2 sputtering target
Specification: Maximum Machining Size L 4000MM T 6-13MM
Detail: Application: Mainly used for producing TiO2 film, widely used in Optical glass AR film, Low-E glass film Physical and Chemical Properties: Chemical Composition: TiOx (1.7<x<1.9 ) Resistivity ( 20¡ãC) : ¡Ü 0.3 ¦¸. cm Mol...

10
rotatable cylindrical azo sputtering target
rotatable cylindrical azo sputtering target
Specification: Maximum Machining Size L 4000MM T 6-13MM
Detail: Application: Widely used in Thin film solar cell electrode film, Low-e glass film Physical and Chemical Properties: Chemical Composition: AZO Molding process: CIP+Sintering+Bonding Purity: ¡Ý5.4g/cm3 Density: ¡Ý 99.95...
Showing 1 - 10 of 12, total 2 pages        [First] [Previous] [Next] [Last]
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